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FQA10N80C-F109 Tech Specifications

MOSFET N-CH 800V 10A TO-3P

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 240W (Tc)
Package / Case TO-3P-3, SC-65-3
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 58nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 800V
Current - Continuous Drain (Id) @ 25°C 10A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package TO-3P
Rds On (Max) @ Id, Vgs 1.1 Ohm @ 5A, 10V
Packaging Tube
Other Names FQA10N80C_F109 FQA10N80C_F109-ND FQA10N80C_F109FS FQA10N80C_F109FS-ND FQA10N80CF109
Mounting Type Through Hole
Manufacturer Standard Lead Time 6 Weeks
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 800V 10A (Tc) 240W (Tc) Through Hole TO-3P
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