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FQD7N20TM_F080 Tech Specifications

MOSFET N-CH 200V 5.3A DPAK

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 5V @ 250µA
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 2.5W (Ta), 45W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 10nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 200V
Current - Continuous Drain (Id) @ 25°C 5.3A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±30V
Supplier Device Package D-Pak
Rds On (Max) @ Id, Vgs 690 mOhm @ 2.65A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 10V
Detailed Description N-Channel 200V 5.3A (Tc) 2.5W (Ta), 45W (Tc) Surface Mount D-Pak
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