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HGTG10N120BND Tech Specifications

IGBT 1200V 35A 298W TO247

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - IGBT - Tunggal
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 960V, 10A, 10 Ohm, 15V
Switching Energy 850µJ (on), 800µJ (off)
Reverse Recovery Time (trr) 70ns
Packaging Tube
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Type Standard
Gate Charge 100nC
Current - Collector Pulsed (Icm) 80A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 10A
Td (on/off) @ 25°C 23ns/165ns
Supplier Device Package TO-247
Power - Max 298W
Package / Case TO-247-3
Mounting Type Through Hole
Lead Free Status / RoHS Status Lead free / RoHS Compliant
IGBT Type NPT
Detailed Description IGBT NPT 1200V 35A 298W Through Hole TO-247
Current - Collector (Ic) (Max) 35A
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HGTG10N120BND Documents

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HGTG10N120BND brand manufacturers: AMI Semiconductor / ON Semiconductor, Bonchip stock, HGTG10N120BND reference price. HGTG10N120BND parameters, HGTG10N120BND Datasheet PDF and pin diagram description download.You can use the HGTG10N120BND Pluggable Connectors, DSP Datesheet PDF, find HGTG10N120BND pin diagram and circuit diagram and usage method of function, HGTG10N120BND electronics tutorials.You can download from the Bonchip.
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