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NJVMJD112G Tech Specifications

TRANS NPN DARL 100V 2A DPAK-4

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - Bipolar (BJT) - Tunggal
Manufacturer AMI Semiconductor / ON Semiconductor
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 100V
Transistor Type NPN - Darlington
Power - Max 1.75W
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 2A, 3V
Current - Collector (Ic) (Max) 2A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 3V @ 40mA, 4A
Supplier Device Package DPAK
Packaging Tape & Reel (TR)
Operating Temperature -65°C ~ 150°C (TJ)
Frequency - Transition 25MHz
Current - Collector Cutoff (Max) 20µA
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NJVMJD112G Documents

Download datasheets and manufacturer documentation for NJVMJD112G

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NJVMJD112G brand manufacturers: AMI Semiconductor / ON Semiconductor, Bonchip stock, NJVMJD112G reference price. NJVMJD112G parameters, NJVMJD112G Datasheet PDF and pin diagram description download.You can use the NJVMJD112G Pluggable Connectors, DSP Datesheet PDF, find NJVMJD112G pin diagram and circuit diagram and usage method of function, NJVMJD112G electronics tutorials.You can download from the Bonchip.
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