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DDTA113ZE-7-F Tech Specifications

TRANS PREBIAS PNP 150MW SOT523

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - Bipolar (BJT) - Tunggal, Pra-Biased
Manufacturer Diodes Incorporated
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type PNP - Pre-Biased
Resistor - Emitter Base (R2) (Ohms) 10k
Power - Max 150mW
Package / Case SOT-523
Frequency - Transition 250MHz
Current - Collector Cutoff (Max) 500nA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Supplier Device Package SOT-523
Resistor - Base (R1) (Ohms) 1k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 33 @ 10mA, 5V
Current - Collector (Ic) (Max) 100mA
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DDTA113ZE-7-F Documents

Download datasheets and manufacturer documentation for DDTA113ZE-7-F

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DDTA113ZCA-7 Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2571
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