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DDTC114YE-7-F Tech Specifications

TRANS PREBIAS NPN 150MW SOT523

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - Bipolar (BJT) - Tunggal, Pra-Biased
Manufacturer Diodes Incorporated
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type NPN - Pre-Biased
Resistor - Emitter Base (R2) (Ohms) 47k
Power - Max 150mW
Package / Case SOT-523
Frequency - Transition 250MHz
Current - Collector Cutoff (Max) 500nA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 250µA, 5mA
Supplier Device Package SOT-523
Resistor - Base (R1) (Ohms) 10k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 68 @ 5mA, 5V
Current - Collector (Ic) (Max) 100mA
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DDTC114YE-7-F Documents

Download datasheets and manufacturer documentation for DDTC114YE-7-F

Others include   "DDTC1"   parts

The following parts include  'DDTC1' 

Part # Manufacturer Category Availability
DDTC113TCA-7 Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2731
DDTC113TCA-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 3615
DDTC113TE-7 Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2539
DDTC113TE-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 18000
DDTC113TKA-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2672
DDTC113TLP-7 Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 31482
DDTC113TUA-7 Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2566
DDTC113TUA-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 15369
DDTC113ZCA-7 Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2736
DDTC113ZCA-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 1498

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