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DDTD113ZC-7-F Tech Specifications

TRANS PREBIAS NPN 200MW SOT23-3

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - Bipolar (BJT) - Tunggal, Pra-Biased
Manufacturer Diodes Incorporated
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 50V
Transistor Type NPN - Pre-Biased
Resistor - Emitter Base (R2) (Ohms) 10k
Power - Max 200mW
Package / Case TO-236-3, SC-59, SOT-23-3
Frequency - Transition 200MHz
Current - Collector Cutoff (Max) 500nA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce Saturation (Max) @ Ib, Ic 300mV @ 2.5mA, 50mA
Supplier Device Package SOT-23-3
Resistor - Base (R1) (Ohms) 1k
Packaging Tape & Reel (TR)
Mounting Type Surface Mount
DC Current Gain (hFE) (Min) @ Ic, Vce 56 @ 50mA, 5V
Current - Collector (Ic) (Max) 500mA
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DDTD113ZC-7-F Documents

Download datasheets and manufacturer documentation for DDTD113ZC-7-F

Others include   "DDTD1"   parts

The following parts include  'DDTD1' 

Part # Manufacturer Category Availability
DDTD113EC-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 3370
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DDTD113ZC DIODES IC Panas Khusus 2639
DDTD113ZC-7 IC Diodes Incorporated IC Panas Khusus 50352
DDTD113ZU-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 3102
DDTD114EC-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 23638
DDTD114ECA Original IC Panas Khusus 9000
DDTD114EU-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 12270
DDTD114GC-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 3000
DDTD114GU-7-F Diodes Incorporated Transistor - Bipolar (BJT) - Tunggal, Pra-Biased 2631

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