DMC3060LVT-13 Tech Specifications

MOSFET BVDSS: 25V-30V TSOT26

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor MOSFET
Manufacturer Diodes Incorporated
Factory Lead Time 3 Weeks
Factory Lead Time 22 Weeks
Package / Case SOT-23-6 Thin, TSOT-23-6
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Active
Number of Terminations 6
Terminal Position DUAL
JESD-30 Code R-PDSO-G6
Configuration SEPARATE, 2 ELEMENTS
Power - Max 830mW
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.8V @ 250μA, 2.1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 3.6A Ta 2.8A Ta
Drain to Source Voltage (Vdss) 30V
Drain Current-Max (Abs) (ID) 3.6A
DS Breakdown Voltage-Min 30V
Power Dissipation-Max (Abs) 1.16W
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type N and P-Channel Complementary
Rds On (Max) @ Id, Vgs 60m Ω @ 3.1A, 10V, 95m Ω @ 2.7A, 10V
Input Capacitance (Ciss) (Max) @ Vds 395pF 324pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 11.3nC @ 10V
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Drain-source On Resistance-Max 0.06Ohm
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Standard
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