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DMN1019UVT-7 Tech Specifications

MOSFET N-CH 12V 10.7A TSOT26

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Diodes Incorporated
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 800mV @ 250µA
Technology MOSFET (Metal Oxide)
Rds On (Max) @ Id, Vgs 10 mOhm @ 9.7A, 4.5V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2588pF @ 10V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 1.2V, 4.5V
Current - Continuous Drain (Id) @ 25°C 10.7A (Ta)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±8V
Supplier Device Package TSOT-26
Power Dissipation (Max) 1.73W (Ta)
Package / Case SOT-23-6 Thin, TSOT-23-6
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 50.4nC @ 8V
FET Feature -
Drain to Source Voltage (Vdss) 12V
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DMN1019UVT-7 Documents

Download datasheets and manufacturer documentation for DMN1019UVT-7

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