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SI4808DY-T1-E3 Tech Specifications

MOSFET 2N-CH 30V 5.7A 8SOIC

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Array
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 800mV @ 250µA (Min)
Series LITTLE FOOT®
Power - Max 1.1W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Manufacturer Standard Lead Time 13 Weeks
Input Capacitance (Ciss) (Max) @ Vds -
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 5.7A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 22 mOhm @ 7.5A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
FET Feature Logic Level Gate
Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 5.7A 1.1W Surface Mount 8-SO
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SI4808DY-T1-E3 Documents

Download datasheets and manufacturer documentation for SI4808DY-T1-E3

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