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SI4972DY-T1-GE3 Tech Specifications

MOSFET 2N-CH 30V 10.8A 8-SOIC

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Array
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 3V @ 250µA
Series TrenchFET®
Power - Max 3.1W, 2.5W
Package / Case 8-SOIC (0.154", 3.90mm Width)
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 28nC @ 10V
FET Feature Standard
Detailed Description Mosfet Array 2 N-Channel (Dual) 30V 10.8A, 7.2A 3.1W, 2.5W Surface Mount 8-SO
Base Part Number SI4972
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Supplier Device Package 8-SO
Rds On (Max) @ Id, Vgs 14.5 mOhm @ 6A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1080pF @ 15V
FET Type 2 N-Channel (Dual)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 10.8A, 7.2A
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SI4972DY-T1-GE3 Documents

Download datasheets and manufacturer documentation for SI4972DY-T1-GE3

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