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SIRA12BDP-T1-GE3 Tech Specifications

MOSFET N-CHAN 30V

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Electro-Films (EFI) / Vishay
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2.4V @ 250µA
Technology MOSFET (Metal Oxide)
Series TrenchFET® Gen IV
Power Dissipation (Max) 5W (Ta), 38W (Tc)
Package / Case PowerPAK® SO-8
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) @ 25°C 27A (Ta), 60A (Tc)
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) +20V, -16V
Supplier Device Package PowerPAK® SO-8
Rds On (Max) @ Id, Vgs 4.3 mOhm @ 10A, 10V
Packaging Cut Tape (CT)
Other Names SIRA12BDP-T1-GE3CT
Mounting Type Surface Mount
Manufacturer Standard Lead Time 42 Weeks
Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 15V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 30V 27A (Ta), 60A (Tc) 5W (Ta), 38W (Tc) Surface Mount PowerPAK® SO-8
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SIRA12BDP-T1-GE3 Documents

Download datasheets and manufacturer documentation for SIRA12BDP-T1-GE3

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SIRA12BDP-T1-GE3 brand manufacturers: Electro-Films (EFI) / Vishay, Bonchip stock, SIRA12BDP-T1-GE3 reference price. SIRA12BDP-T1-GE3 parameters, SIRA12BDP-T1-GE3 Datasheet PDF and pin diagram description download.You can use the SIRA12BDP-T1-GE3 Pluggable Connectors, DSP Datesheet PDF, find SIRA12BDP-T1-GE3 pin diagram and circuit diagram and usage method of function, SIRA12BDP-T1-GE3 electronics tutorials.You can download from the Bonchip.
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