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FQB12N60CTM Tech Specifications

MOSFET N-CH 600V 12A D2PAK

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer Fairchild/ON Semiconductor
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package D²PAK (TO-263AB)
Rds On (Max) @ Id, Vgs 650 mOhm @ 6A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 2290pF @ 25V
FET Type N-Channel
Drain to Source Voltage (Vdss) 600V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series QFET®
Power Dissipation (Max) 3.13W (Ta), 225W (Tc)
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
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FQB12N60CTM Documents

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