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GSID100A120T2C1A Tech Specifications

SILICON IGBT MODULES

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - IGBT - Modul
Manufacturer Global Power Technologies Group
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 1200V
Supplier Device Package Module
Power - Max 800W
Operating Temperature -40°C ~ 150°C
Mounting Type Chassis Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Input Three Phase Bridge Rectifier
Detailed Description IGBT Module Three Phase Inverter 1200V 200A 800W Chassis Mount Module
Current - Collector (Ic) (Max) 200A
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Series Amp+™
Package / Case Module
NTC Thermistor Yes
Manufacturer Standard Lead Time 8 Weeks
Input Capacitance (Cies) @ Vce 13.7nF @ 25V
IGBT Type -
Current - Collector Cutoff (Max) 1mA
Configuration Three Phase Inverter
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GSID100A120T2C1A Documents

Download datasheets and manufacturer documentation for GSID100A120T2C1A

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GSID100A120T2C1 Global Power Technologies Group Transistor - IGBT - Modul 2762
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