AUIRF9Z34N Tech Specifications

AUIRF9Z34N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 9 Weeks
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Published 2007
Part Status Obsolete
Number of Terminations 3
Additional Feature AVALANCHE RATED, HIGH RELIABILITY
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 68W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type P-Channel
Rds On (Max) @ Id, Vgs 100m Ω @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds 620pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Drain to Source Voltage (Vdss) 55V
Vgs (Max) ±20V
Turn-Off Delay Time 30 ns
Threshold Voltage -2V
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 68A
Length 10.66mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Series Automotive, AEC-Q101, HEXFET®
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Other Transistors
Number of Elements 1
Element Configuration Single
Power Dissipation 68W
Turn On Delay Time 13 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 250μA
Current - Continuous Drain (Id) @ 25°C 19A Tc
Rise Time 55ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 41 ns
Continuous Drain Current (ID) 19A
JEDEC-95 Code TO-220AB
Drain to Source Breakdown Voltage -55V
Height 16.51mm
Width 4.82mm
REACH SVHC No SVHC
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