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BCR183WE6327HTSA1 Tech Specifications

TRANS PREBIAS PNP 250MW SOT323-3

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Pra-Bias
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case SC-70, SOT-323
Packaging Tape & Reel (TR)
Part Status Obsolete
Number of Terminations 3
Max Power Dissipation 250mW
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Number of Elements 1
Power - Max 250mW
Polarity/Channel Type PNP
Collector Emitter Voltage (VCEO) 300mV
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 5mA 5V
Vce Saturation (Max) @ Ib, Ic 300mV @ 500μA, 10mA
Transition Frequency 200MHz
Resistor - Base (R1) 10 k Ω
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Transistor Element Material SILICON
Published 2011
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Additional Feature BUILT-IN BIAS RESISTOR RATIO IS 1
Terminal Position DUAL
Base Part Number BCR183
Operating Temperature (Max) 150°C
Configuration SINGLE WITH BUILT-IN RESISTOR
Transistor Application SWITCHING
Transistor Type PNP - Pre-Biased
Max Collector Current 100mA
Current - Collector Cutoff (Max) 100nA ICBO
Collector Emitter Breakdown Voltage 50V
Frequency - Transition 200MHz
Resistor - Emitter Base (R2) 10 k Ω
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BCR183WE6327HTSA1 Documents

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