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BCW66KHB6327HTLA1 Tech Specifications

BCW66KHB6327HTLA1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor BJT Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature 150°C TJ
Published 2007
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation 500mW
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 45V
DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 100mA 1V
Vce Saturation (Max) @ Ib, Ic 450mV @ 50mA, 500mA
Current - Collector (Ic) (Max) 800mA
Collector Base Voltage (VCBO) 75V
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Part Status Obsolete
Number of Terminations 3
Max Power Dissipation 500mW
Terminal Form GULL WING
Frequency 170MHz
Base Part Number BCW66
Configuration SINGLE
Transistor Application AMPLIFIER
Transistor Type NPN
Max Collector Current 800mA
Current - Collector Cutoff (Max) 20nA ICBO
Collector Emitter Breakdown Voltage 45V
Transition Frequency 170MHz
Emitter Base Voltage (VEBO) 5V
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