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BSB012NE2LXIXUMA1 Tech Specifications

MOSFET N-CH 25V 170A WDSON

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Mount Surface Mount
Package / Case 3-WDSON
Operating Temperature -40°C~150°C TJ
Published 2013
JESD-609 Code e4
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Element Configuration Single
Rds On (Max) @ Id, Vgs 1.2m Ω @ 30A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 170A Tc
Rise Time 6ns
Vgs (Max) ±20V
Turn-Off Delay Time 34 ns
Gate to Source Voltage (Vgs) 20V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Nickel
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 2.8W Ta 57W Tc
FET Type N-Channel
Vgs(th) (Max) @ Id 2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 5852pF @ 12V
Gate Charge (Qg) (Max) @ Vgs 82nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 4.6 ns
Continuous Drain Current (ID) 170A
Drain to Source Breakdown Voltage 25V
Lead Free Lead Free
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BSB012NE2LXIXUMA1 Documents

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