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BSC050N03MSGATMA1 Tech Specifications

Trans MOSFET N-CH 30V 16A 8-Pin TDSON EP

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
Pin Count 8
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2V @ 250μA
Current - Continuous Drain (Id) @ 25°C 16A Ta 80A Tc
Rise Time 7.2ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Continuous Drain Current (ID) 16A
Drain-source On Resistance-Max 0.0063Ohm
DS Breakdown Voltage-Min 30V
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Contact Plating Tin
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2013
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 5
Additional Feature AVALANCHE RATED
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F5
Number of Elements 1
Power Dissipation-Max 2.5W Ta 50W Tc
Power Dissipation 50W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5m Ω @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds 3600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 46nC @ 10V
Drain to Source Voltage (Vdss) 30V
Vgs (Max) ±20V
Gate to Source Voltage (Vgs) 16V
Pulsed Drain Current-Max (IDM) 320A
Avalanche Energy Rating (Eas) 35 mJ
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