BSC350N20NSFDATMA1 Tech Specifications

BSC350N20NSFDATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 26 Weeks
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Part Status Active
Number of Terminations 5
Terminal Finish Tin (Sn)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35m Ω @ 35A, 10V
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 35A
Drain-source On Resistance-Max 0.035Ohm
Avalanche Energy Rating (Eas) 97 mJ
Height 1.1mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~175°C TJ
Published 2013
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Terminal Form FLAT
Reach Compliance Code not_compliant
JESD-30 Code R-PDSO-F5
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 150W Tc
Power Dissipation 150W
Turn On Delay Time 8 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 90μA
Current - Continuous Drain (Id) @ 25°C 35A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 17 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 200V
Max Junction Temperature (Tj) 175°C
RoHS Status ROHS3 Compliant
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BSC350N20NSFDATMA1 Documents

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