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BSM150GB170DN2HOSA1 Tech Specifications

IGBT MOD 1700V 220A 1250W

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Modul IGBT
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Chassis Mount
Package / Case Module
Operating Temperature 150°C TJ
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 1.25kW
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X7
Configuration Half Bridge
Power - Max 1250W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.9V
Current - Collector Cutoff (Max) 1.5mA
Voltage - Collector Emitter Breakdown (Max) 1700V
Turn On Time 720 ns
Turn Off Time-Nom (toff) 1310 ns
Input Capacitance (Cies) @ Vce 20nF @ 25V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Transistor Element Material SILICON
Published 1999
Part Status Obsolete
Number of Terminations 7
Terminal Position UPPER
Pin Count 7
Number of Elements 2
Case Connection ISOLATED
Transistor Application POWER CONTROL
Input Standard
Max Collector Current 220A
Collector Emitter Breakdown Voltage 1.7kV
Input Capacitance 20nF
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 150A
NTC Thermistor No
RoHS Status RoHS Compliant
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BSM150GB170DN2HOSA1 Documents

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BSM150GB170DN2HOSA1 brand manufacturers: Infineon Technologies, Bonchip stock, BSM150GB170DN2HOSA1 reference price. BSM150GB170DN2HOSA1 parameters, BSM150GB170DN2HOSA1 Datasheet PDF and pin diagram description download.You can use the BSM150GB170DN2HOSA1 Pluggable Connectors, DSP Datesheet PDF, find BSM150GB170DN2HOSA1 pin diagram and circuit diagram and usage method of function, BSM150GB170DN2HOSA1 electronics tutorials.You can download from the Bonchip.
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