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BSO207PNTMA1 Tech Specifications

Trans MOSFET P-CH 20V 5.7A 8-Pin DSO

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor MOSFET
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 2W
Base Part Number BSO207
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1.2V @ 40μA
Gate Charge (Qg) (Max) @ Vgs 23.4nC @ 4.5V
Continuous Drain Current (ID) 5.7A
DS Breakdown Voltage-Min 20V
FET Technology METAL-OXIDE SEMICONDUCTOR
RoHS Status Non-RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2001
Part Status Obsolete
Number of Terminations 8
Additional Feature LOGIC LEVEL COMPATIBLE, AVALANCHE RATED
Terminal Form GULL WING
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 45m Ω @ 5.7A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 1013pF @ 15V
Drain to Source Voltage (Vdss) 20V
Drain-source On Resistance-Max 0.045Ohm
Avalanche Energy Rating (Eas) 44 mJ
FET Feature Logic Level Gate
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