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BSZ520N15NS3GATMA1 Tech Specifications

BSZ520N15NS3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 8
Operating Temperature -55°C~150°C TJ
Published 2011
JESD-609 Code e3
Part Status Active
Number of Terminations 5
Terminal Finish Matte Tin (Sn)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 52m Ω @ 18A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 21A Tc
Rise Time 5ns
Vgs (Max) ±20V
Turn-Off Delay Time 10 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.052Ohm
Radiation Hardening No
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerTDFN
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Pin Count 8
Number of Elements 1
Power Dissipation-Max 57W Tc
Power Dissipation 57W
Turn On Delay Time 7 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 35μA
Input Capacitance (Ciss) (Max) @ Vds 890pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 21A
Max Dual Supply Voltage 150V
Avalanche Energy Rating (Eas) 60 mJ
RoHS Status ROHS3 Compliant
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BSZ520N15NS3GATMA1 Documents

Download datasheets and manufacturer documentation for BSZ520N15NS3GATMA1

  • Datasheets

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BSZ520N15NS3GATMA1 International Rectifier (Infineon Technologies) Transistor - FET, MOSFET - Tunggal 5258

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