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F4150R12KS4BOSA1 Tech Specifications

IGBT MOD 1200V 180A 960W

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Modul IGBT
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Chassis Mount
Number of Pins 26
Operating Temperature -40°C~125°C
Part Status Active
Number of Terminations 26
Additional Feature UL RECOGNIZED
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration Three Phase Inverter
Power - Max 960W
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.2kV
Current - Collector Cutoff (Max) 5mA
Turn On Time 190 ns
Turn Off Time-Nom (toff) 390 ns
Input Capacitance (Cies) @ Vce 10nF @ 25V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 4
Case Connection ISOLATED
Transistor Application POWER CONTROL
Input Standard
Max Collector Current 180A
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 3.75V @ 15V, 150A
NTC Thermistor Yes
RoHS Status RoHS Compliant
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F4150R12KS4BOSA1 Documents

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