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FD1000R33HE3KBPSA1 Tech Specifications

Trans IGBT Module N-CH 3.3KV 1000A 9-pin IHVB190-3

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Modul IGBT
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Mounting Type Chassis Mount
Number of Pins 9
Operating Temperature -40°C~150°C
Part Status Active
Number of Terminations 9
Terminal Form UNSPECIFIED
Configuration Dual Brake Chopper
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 3.3kV
Current - Collector Cutoff (Max) 5mA
Current - Collector (Ic) (Max) 1000A
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 1000A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 190nF @ 25V
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Screw
Package / Case Module
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) Not Applicable
Terminal Position UPPER
Number of Elements 2
Element Configuration Dual
Power - Max 11500W
Halogen Free Not Halogen Free
Input Standard
Max Collector Current 1kA
Voltage - Collector Emitter Breakdown (Max) 3300V
Turn On Time 1150 ns
Turn Off Time-Nom (toff) 3550 ns
NTC Thermistor No
RoHS Status RoHS Compliant
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