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FF1000R17IE4BOSA1 Tech Specifications

INFINEON FF1000R17IE4 IGBT Array & Module Transistor, N Channel, 1000 A, 2 V, 6.25 kW, 1.7 kV, Module

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Modul IGBT
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case Module
Number of Pins 12
Operating Temperature -40°C~150°C
Series PrimePACK™3
Part Status Active
Number of Terminations 7
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 12
Qualification Status Not Qualified
Configuration 2 Independent
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 5mA
Turn On Time 720 ns
Turn Off Time-Nom (toff) 1890 ns
Input Capacitance (Cies) @ Vce 81nF @ 25V
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Surface Mount NO
Transistor Element Material SILICON
Published 2002
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X7
Number of Elements 2
Element Configuration Dual
Power - Max 6250W
Halogen Free Not Halogen Free
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1700V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 1000A
NTC Thermistor Yes
RoHS Status RoHS Compliant
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FF1000R17IE4BOSA1 Documents

Download datasheets and manufacturer documentation for FF1000R17IE4BOSA1

  • Datasheets

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