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FF650R17IE4VBOSA1 Tech Specifications

IGBT MODULE 1700V 4150W

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Modul IGBT
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 50 Weeks
Package / Case Module
Transistor Element Material SILICON
Published 2002
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PUFM-X10
Configuration 2 Independent
Case Connection ISOLATED
Transistor Application GENERAL PURPOSE
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 5mA
Turn On Time 720 ns
Turn Off Time-Nom (toff) 1870 ns
Input Capacitance (Cies) @ Vce 54nF @ 25V
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Surface Mount NO
Operating Temperature -40°C~150°C
Part Status Active
Number of Terminations 10
Terminal Form UNSPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 2
Element Configuration Dual
Power - Max 4150W
Halogen Free Not Halogen Free
Input Standard
Voltage - Collector Emitter Breakdown (Max) 1700V
Vce(on) (Max) @ Vge, Ic 2.45V @ 15V, 650A
NTC Thermistor Yes
RoHS Status Non-RoHS Compliant
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FF650R17IE4VBOSA1 Documents

Download datasheets and manufacturer documentation for FF650R17IE4VBOSA1

  • Datasheets

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