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FP75R07N2E4BOSA1 Tech Specifications

IGBT MODULE VCES 600V 75A

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Modul IGBT
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 12 Weeks
Package / Case Module
Transistor Element Material SILICON
Published 2002
Part Status Active
Number of Terminations 31
Terminal Position UPPER
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X31
Configuration Three Phase Inverter
Transistor Application POWER CONTROL
Input Standard
Voltage - Collector Emitter Breakdown (Max) 650V
Turn On Time 45 ns
Turn Off Time-Nom (toff) 320 ns
NTC Thermistor Yes
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Chassis Mount
Surface Mount NO
Operating Temperature -40°C~150°C
Pbfree Code no
Moisture Sensitivity Level (MSL) Not Applicable
ECCN Code EAR99
Terminal Form UNSPECIFIED
Reach Compliance Code compliant
Pin Count 31
Number of Elements 7
Case Connection ISOLATED
Polarity/Channel Type N-CHANNEL
Current - Collector Cutoff (Max) 1mA
Current - Collector (Ic) (Max) 95A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 75A
IGBT Type Trench Field Stop
Input Capacitance (Cies) @ Vce 4.6nF @ 25V
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FP75R07N2E4BOSA1 Documents

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