IPAW60R190CEXKSA1 Tech Specifications

In a Tube of 450, N-Channel MOSFET, 26.7 A, 600 V, 3 + Tab-Pin TO-220FP Infineon IPAW60R190CEXKSA1

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Through Hole
Number of Pins 3
Packaging Tube
Series CoolMOS™
Part Status Active
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 34W Tc
Rds On (Max) @ Id, Vgs 190m Ω @ 9.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1400pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 26.7A
FET Feature Super Junction
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3 Full Pack
Operating Temperature -40°C~150°C TJ
Published 2013
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
FET Type N-Channel
Vgs(th) (Max) @ Id 3.5V @ 630μA
Current - Continuous Drain (Id) @ 25°C 26.7A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Threshold Voltage 3V
REACH SVHC No SVHC
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