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IPB65R110CFDATMA1 Tech Specifications

Trans MOSFET N-CH 700V 31.2A 3-Pin(2+Tab) TO-263

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 16 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 1.3mA
Input Capacitance (Ciss) (Max) @ Vds 3240pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 118nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 31.2A
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 99.6A
Radiation Hardening No
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series CoolMOS™
Pbfree Code no
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Pin Count 4
Number of Elements 1
Power Dissipation-Max 277.8W Tc
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 110m Ω @ 12.7A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 31.2A Tc
Rise Time 11ns
Vgs (Max) ±20V
Turn-Off Delay Time 68 ns
Threshold Voltage 4V
Max Dual Supply Voltage 650V
Avalanche Energy Rating (Eas) 845 mJ
REACH SVHC No SVHC
Lead Free Contains Lead
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