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IPB80N06S207ATMA1 Tech Specifications

Trans MOSFET N-CH 55V 80A 3-Pin(2+Tab) TO-263

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Operating Temperature -55°C~175°C TJ
Published 2010
Part Status Discontinued
ECCN Code EAR99
Power Dissipation-Max 250W Tc
Rds On (Max) @ Id, Vgs 6.3m Ω @ 68A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 80A Tc
Rise Time 37ns
Vgs (Max) ±20V
Turn-Off Delay Time 61 ns
Max Dual Supply Voltage 55V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Packaging Tape & Reel (TR)
Series OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 180μA
Input Capacitance (Ciss) (Max) @ Vds 3400pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 36 ns
Continuous Drain Current (ID) 80A
RoHS Status ROHS3 Compliant
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