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IPD600N25N3GATMA1 Tech Specifications

IPD600N25N3GATMA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 2
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Reach Compliance Code not_compliant
JESD-30 Code R-PSSO-G2
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 60m Ω @ 25A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 25A Tc
Drive Voltage (Max Rds On,Min Rds On) 10V
Continuous Drain Current (ID) 25A
Max Dual Supply Voltage 250V
Pulsed Drain Current-Max (IDM) 100A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 136W Tc
Case Connection DRAIN
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 90μA
Input Capacitance (Ciss) (Max) @ Vds 2350pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 29nC @ 10V
Vgs (Max) ±20V
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.06Ohm
Avalanche Energy Rating (Eas) 210 mJ
Lead Free Contains Lead
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IPD600N25N3GATMA1 Documents

Download datasheets and manufacturer documentation for IPD600N25N3GATMA1

  • Datasheets

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