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IPG20N06S2L50AATMA1 Tech Specifications

MOSFET N-Ch 55V 20A TDSON-8

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor MOSFET
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 10 Weeks
Mounting Type Surface Mount, Wettable Flank
Number of Pins 8
Operating Temperature -55°C~175°C TJ
Published 1997
Part Status Active
Max Operating Temperature 175°C
Max Power Dissipation 51W
Power - Max 51W
Rds On (Max) @ Id, Vgs 50mOhm @ 15A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 20A
Rise Time 3ns
Fall Time (Typ) 10 ns
Continuous Drain Current (ID) 20A
Max Dual Supply Voltage 55V
Input Capacitance 560pF
Drain to Source Resistance 50mOhm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Surface Mount
Package / Case 8-PowerVDFN
Supplier Device Package PG-TDSON-8-10
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, OptiMOS™
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Min Operating Temperature -55°C
Element Configuration Dual
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2V @ 19μA
Input Capacitance (Ciss) (Max) @ Vds 560pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 17nC @ 10V
Drain to Source Voltage (Vdss) 55V
Turn-Off Delay Time 15 ns
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 55V
FET Feature Logic Level Gate
Rds On Max 50 mΩ
Lead Free Contains Lead
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