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IPP075N15N3GXKSA1 Tech Specifications

IPP075N15N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 13 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2008
JESD-609 Code e3
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Pin Count 3
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 25 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4V @ 270μA
Input Capacitance (Ciss) (Max) @ Vds 5470pF @ 75V
Gate Charge (Qg) (Max) @ Vgs 93nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0075Ohm
Avalanche Energy Rating (Eas) 780 mJ
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Position SINGLE
Number of Elements 1
Power Dissipation-Max 300W Tc
Power Dissipation 300W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 7.5m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 100A Tc
Rise Time 35ns
Vgs (Max) ±20V
Turn-Off Delay Time 46 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 150V
Pulsed Drain Current-Max (IDM) 400A
Radiation Hardening No
Lead Free Lead Free
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IPP075N15N3GXKSA1 Documents

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