IPP120P04P4L03AKSA1 Tech Specifications

IPP120P04P4L03AKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 14 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2011
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature LOGIC LEVEL COMPATIBLE
Terminal Position SINGLE
Reach Compliance Code not_compliant
Number of Elements 1
Power Dissipation-Max 136W Tc
Turn On Delay Time 21 ns
Rds On (Max) @ Id, Vgs 3.4m Ω @ 100A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 120A Tc
Rise Time 16ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 57 ns
Continuous Drain Current (ID) 120A
Gate to Source Voltage (Vgs) 16V
Drain-source On Resistance-Max 0.0052Ohm
Avalanche Energy Rating (Eas) 78 mJ
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series Automotive, AEC-Q101, OptiMOS™
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type P-Channel
Vgs(th) (Max) @ Id 2.2V @ 340μA
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 234nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±16V
Turn-Off Delay Time 85 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage -40V
Pulsed Drain Current-Max (IDM) 480A
RoHS Status ROHS3 Compliant
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