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IPP60R380C6XKSA1 Tech Specifications

Trans MOSFET N-CH 600V 10.6A 3-Pin(3+Tab) TO-220

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Not For New Designs
Number of Terminations 3
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 320μA
Current - Continuous Drain (Id) @ 25°C 10.6A Tc
Drain to Source Voltage (Vdss) 600V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 10.6A
Pulsed Drain Current-Max (IDM) 30A
Avalanche Energy Rating (Eas) 210 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH VOLTAGE
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 83W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380m Ω @ 3.8A, 10V
Input Capacitance (Ciss) (Max) @ Vds 700pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-220AB
Drain-source On Resistance-Max 0.38Ohm
DS Breakdown Voltage-Min 600V
RoHS Status ROHS3 Compliant
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