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IPP70N04S406AKSA1 Tech Specifications

MOSFET N-CH 40V 70A TO220-3-1

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2010
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 58W Tc
Turn On Delay Time 8 ns
Rds On (Max) @ Id, Vgs 6.5m Ω @ 70A, 10V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 70A Tc
Rise Time 10ns
Vgs (Max) ±20V
Turn-Off Delay Time 7 ns
JEDEC-95 Code TO-220AB
Max Dual Supply Voltage 40V
Pulsed Drain Current-Max (IDM) 280A
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-220-3
Transistor Element Material SILICON
Packaging Tube
Series OptiMOS™
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Vgs(th) (Max) @ Id 4V @ 26μA
Input Capacitance (Ciss) (Max) @ Vds 2550pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Fall Time (Typ) 9 ns
Continuous Drain Current (ID) 70A
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0065Ohm
Avalanche Energy Rating (Eas) 72 mJ
Lead Free Contains Lead
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