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IPU50R3K0CEBKMA1 Tech Specifications

Trans MOSFET N-CH 550V 1.7A 3-Pin TO-251 Tube

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount, Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ CE
Part Status Obsolete
Number of Terminations 3
Technology MOSFET (Metal Oxide)
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Power Dissipation-Max 18W Tc
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3 Ω @ 400mA, 13V
Halogen Free Halogen Free
Current - Continuous Drain (Id) @ 25°C 1.7A Tc
Rise Time 5.8ns
Vgs (Max) ±20V
Turn-Off Delay Time 23 ns
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 3Ohm
Pulsed Drain Current-Max (IDM) 4.1A
Height 6.22mm
Width 2.41mm
Lead Free Contains Lead
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2013
Pbfree Code no
Moisture Sensitivity Level (MSL) 3 (168 Hours)
Subcategory FET General Purpose Power
Peak Reflow Temperature (Cel) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Turn On Delay Time 7.3 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 30μA
Input Capacitance (Ciss) (Max) @ Vds 84pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 13V
Fall Time (Typ) 49 ns
Continuous Drain Current (ID) 1.7A
Max Dual Supply Voltage 500V
Drain to Source Breakdown Voltage 550V
Avalanche Energy Rating (Eas) 18 mJ
Length 6.73mm
RoHS Status RoHS Compliant
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