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IPW50R350CPFKSA1 Tech Specifications

MOSFET N-CH 550V 10A TO247-3

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 8 Weeks
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™
Pbfree Code yes
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Reach Compliance Code compliant
Pin Count 3
Qualification Status Not Qualified
Configuration SINGLE WITH BUILT-IN DIODE
Operating Mode ENHANCEMENT MODE
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.5V @ 370μA
Current - Continuous Drain (Id) @ 25°C 10A Tc
Drain to Source Voltage (Vdss) 550V
Vgs (Max) ±20V
Drain Current-Max (Abs) (ID) 10A
Pulsed Drain Current-Max (IDM) 22A
Avalanche Energy Rating (Eas) 246 mJ
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2008
JESD-609 Code e3
Part Status Obsolete
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Number of Elements 1
Power Dissipation-Max 89W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 350m Ω @ 5.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1020pF @ 100V
Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
JEDEC-95 Code TO-247AD
Drain-source On Resistance-Max 0.35Ohm
DS Breakdown Voltage-Min 500V
RoHS Status RoHS Compliant
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