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IPW60R031CFD7XKSA1 Tech Specifications

IPW60R031CFD7XKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 18 Weeks
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Series CoolMOS™ CFD7
Part Status Active
Number of Terminations 3
Terminal Finish Tin (Sn)
Terminal Position SINGLE
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Number of Channels 1
Operating Mode ENHANCEMENT MODE
Turn On Delay Time 48 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 4.5V @ 1.63mA
Current - Continuous Drain (Id) @ 25°C 63A Tc
Drain to Source Voltage (Vdss) 650V
Vgs (Max) ±20V
Continuous Drain Current (ID) 63A
Drain to Source Breakdown Voltage 600V
Avalanche Energy Rating (Eas) 326 mJ
Height 25.4mm
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Through Hole
Surface Mount NO
Operating Temperature -55°C~150°C TJ
Published 2014
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
JESD-30 Code R-PSFM-T3
Configuration SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max 278W Tc
Power Dissipation 278W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 31m Ω @ 32.6A, 10V
Input Capacitance (Ciss) (Max) @ Vds 5623pF @ 400V
Gate Charge (Qg) (Max) @ Vgs 141nC @ 10V
Drive Voltage (Max Rds On,Min Rds On) 10V
Turn-Off Delay Time 175 ns
Gate to Source Voltage (Vgs) 20V
Pulsed Drain Current-Max (IDM) 277A
Max Junction Temperature (Tj) 150°C
RoHS Status ROHS3 Compliant
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IPW60R031CFD7XKSA1 Documents

Download datasheets and manufacturer documentation for IPW60R031CFD7XKSA1

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