IRF7324PBF Tech Specifications

IRF7324PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor MOSFET
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 19 Weeks
Package / Case 8-SOIC (0.154, 3.90mm Width)
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®
Part Status Discontinued
Number of Terminations 8
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Peak Reflow Temperature (Cel) 260
Base Part Number IRF7324PBF
Qualification Status Not Qualified
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Power - Max 2W
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 1V @ 250μA
Current - Continuous Drain (Id) @ 25°C 9A
Drain to Source Voltage (Vdss) 20V
Drain Current-Max (Abs) (ID) 9A
Pulsed Drain Current-Max (IDM) 71A
FET Technology METAL-OXIDE SEMICONDUCTOR
FET Feature Logic Level Gate
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Surface Mount YES
Operating Temperature -55°C~150°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PDSO-G8
Number of Elements 2
Operating Mode ENHANCEMENT MODE
FET Type 2 P-Channel (Dual)
Rds On (Max) @ Id, Vgs 18m Ω @ 9A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds 2940pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 63nC @ 5V
JEDEC-95 Code MS-012AA
Drain-source On Resistance-Max 0.018Ohm
DS Breakdown Voltage-Min 20V
Power Dissipation-Max (Abs) 2W
RoHS Status ROHS3 Compliant
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