IRFH7911TR2PBF Tech Specifications

IRFH7911TR2PBF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Infineon Technologies stock available at Bonchip

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Array Transistor MOSFET
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case 18-PowerVQFN
Supplier Device Package PQFN (5x6)
Published 2012
Part Status Obsolete
Max Operating Temperature 150°C
Max Power Dissipation 3.4W
Number of Elements 2
Power Dissipation 3.4W
FET Type 2 N-Channel (Dual)
Vgs(th) (Max) @ Id 2.35V @ 25μA
Current - Continuous Drain (Id) @ 25°C 13A 28A
Rise Time 35ns
Fall Time (Typ) 14 ns
Continuous Drain Current (ID) 28A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 1.06nF
FET Feature Logic Level Gate
Rds On Max 8.6 mΩ
Height 939.8μm
Width 5mm
REACH SVHC No SVHC
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 18
Packaging Cut Tape (CT)
Series HEXFET®
Moisture Sensitivity Level (MSL) 2 (1 Year)
Min Operating Temperature -55°C
Base Part Number IRFH7911PBF
Element Configuration Dual
Power - Max 2.4W 3.4W
Rds On (Max) @ Id, Vgs 8.6mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1060pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 12nC @ 4.5V
Drain to Source Voltage (Vdss) 30V
Turn-Off Delay Time 28 ns
Threshold Voltage 2.35V
Drain to Source Breakdown Voltage 30V
Recovery Time 20 ns
Drain to Source Resistance 3mOhm
Nominal Vgs 2.35 V
Length 5.9944mm
Radiation Hardening No
RoHS Status RoHS Compliant
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