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IRFR3704ZTRLPBF Tech Specifications

MOSFET N-CH 20V 60A DPAK

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Transistor Element Material SILICON
Packaging Tape & Reel (TR)
Series HEXFET®
Part Status Obsolete
Number of Terminations 2
Terminal Finish MATTE TIN OVER NICKEL
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Element Configuration Single
Power Dissipation 48W
Turn On Delay Time 8.4 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 2.55V @ 250μA
Current - Continuous Drain (Id) @ 25°C 60A Tc
Rise Time 8.9ns
Vgs (Max) ±20V
Turn-Off Delay Time 4.9 ns
JEDEC-95 Code TO-252AA
Drain-source On Resistance-Max 0.0084Ohm
Pulsed Drain Current-Max (IDM) 240A
Length 6.7056mm
Radiation Hardening No
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Operating Temperature -55°C~175°C TJ
Published 2004
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Power Dissipation-Max 48W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.4m Ω @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds 1190pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 14nC @ 4.5V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Fall Time (Typ) 12 ns
Continuous Drain Current (ID) 60A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 20V
Height 2.38mm
Width 6.22mm
RoHS Status RoHS Compliant
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