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IRFS7434PBF Tech Specifications

MOSFET N-CH 40V 195A D2PAK

Product Attribute Attribute Value
Category Semikonduktor Diskrit / Transistor MOSFET Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Mount Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Weight 3.949996g
Operating Temperature -55°C~175°C TJ
Published 2009
JESD-609 Code e3
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Terminal Form GULL WING
[email protected] Reflow Temperature-Max (s) 30
Number of Elements 1
Power Dissipation-Max 294W Tc
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.6m Ω @ 100A, 10V
Input Capacitance (Ciss) (Max) @ Vds 10820pF @ 25V
Gate Charge (Qg) (Max) @ Vgs 324nC @ 10V
Drain to Source Voltage (Vdss) 40V
Vgs (Max) ±20V
Turn-Off Delay Time 115 ns
Threshold Voltage 3V
Pulsed Drain Current-Max (IDM) 780A
Height 4.83mm
Width 9.65mm
RoHS Status ROHS3 Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mounting Type Surface Mount
Number of Pins 3
Transistor Element Material SILICON
Packaging Tube
Series HEXFET®, StrongIRFET™
Part Status Discontinued
Number of Terminations 2
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) 260
JESD-30 Code R-PSSO-G2
Number of Channels 1
Element Configuration Single
Power Dissipation 294W
Turn On Delay Time 24 ns
Transistor Application SWITCHING
Vgs(th) (Max) @ Id 3.9V @ 250μA
Current - Continuous Drain (Id) @ 25°C 195A Tc
Rise Time 68ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Fall Time (Typ) 68 ns
Continuous Drain Current (ID) 195A
Gate to Source Voltage (Vgs) 20V
DS Breakdown Voltage-Min 40V
Length 10.67mm
REACH SVHC No SVHC
Lead Free Lead Free
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