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IRG4PC50F-EPBF Tech Specifications

IGBT 600V 70A 200W TO247AD

Product Attribute Attribute Value
Category Semikonduktor Diskrit / IGBT Tunggal
Manufacturer Infineon Technologies
Factory Lead Time 3 Weeks
Factory Lead Time 11 Weeks
Mounting Type Through Hole
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Published 2008
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 200W
Element Configuration Single
Case Connection COLLECTOR
Turn On Delay Time 31 ns
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 1.6V
JEDEC-95 Code TO-247AD
Gate to Source Voltage (Vgs) 20V
Turn On Time 52 ns
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 39A
Gate Charge 190nC
Td (on/off) @ 25°C 31ns/240ns
Gate-Emitter Thr Voltage-Max 6V
Height 20.701mm
Width 5.3086mm
RoHS Status RoHS Compliant
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Mount Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Packaging Tube
Part Status Obsolete
Number of Terminations 3
Subcategory Insulated Gate BIP Transistors
Number of Elements 1
Power Dissipation 200W
Input Type Standard
Transistor Application POWER CONTROL
Turn-Off Delay Time 240 ns
Max Collector Current 70A
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.45V
Test Condition 480V, 39A, 5 Ω, 15V
Turn Off Time-Nom (toff) 620 ns
Current - Collector Pulsed (Icm) 280A
Switching Energy 370μJ (on), 2.1mJ (off)
Fall Time-Max (tf) 190ns
Length 15.875mm
Radiation Hardening No
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