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BSZ018NE2LSATMA1 Tech Specifications

MOSFET N-CH 25V 23A TSDSON-8

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2V @ 250µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 2.1W (Ta), 69W (Tc)
Package / Case 8-PowerTDFN
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 12V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 25V 23A (Ta), 40A (Tc) 2.1W (Ta), 69W (Tc) Surface Mount PG-TSDSON-8-FL
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TSDSON-8-FL
Rds On (Max) @ Id, Vgs 1.8 mOhm @ 30A, 10V
Packaging Original-Reel®
Other Names BSZ018NE2LSATMA1DKR BSZ018NE2LSDKR BSZ018NE2LSDKR-ND
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 25V
Current - Continuous Drain (Id) @ 25°C 23A (Ta), 40A (Tc)
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