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BSZ097N04LSGATMA1 Tech Specifications

MOSFET N-CH 40V 40A TSDSON-8

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 2V @ 14µA
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 2.1W (Ta), 35W (Tc)
Package / Case 8-PowerTDFN
Operating Temperature -55°C ~ 150°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Input Capacitance (Ciss) (Max) @ Vds 1900pF @ 20V
FET Type N-Channel
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Detailed Description N-Channel 40V 12A (Ta), 40A (Tc) 2.1W (Ta), 35W (Tc) Surface Mount PG-TSDSON-8
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vgs (Max) ±20V
Supplier Device Package PG-TSDSON-8
Rds On (Max) @ Id, Vgs 9.7 mOhm @ 20A, 10V
Packaging Tape & Reel (TR)
Other Names BSZ097N04LS G BSZ097N04LSG BSZ097N04LSGATMA1TR BSZ097N04LSGINTR BSZ097N04LSGINTR-ND BSZ097N04LSGXT SP000388296
Mounting Type Surface Mount
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
FET Feature -
Drain to Source Voltage (Vdss) 40V
Current - Continuous Drain (Id) @ 25°C 12A (Ta), 40A (Tc)
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