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IPD16CN10N G Tech Specifications

MOSFET N-CH 100V 53A TO252-3

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - FET, MOSFET - Tunggal
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Vgs(th) (Max) @ Id 4V @ 61µA
Supplier Device Package PG-TO252-3
Rds On (Max) @ Id, Vgs 16 mOhm @ 53A, 10V
Packaging Tape & Reel (TR)
Operating Temperature -55°C ~ 175°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds 3220pF @ 50V
FET Type N-Channel
Drain to Source Voltage (Vdss) 100V
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Technology MOSFET (Metal Oxide)
Series OptiMOS™
Power Dissipation (Max) 100W (Tc)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type Surface Mount
Gate Charge (Qg) (Max) @ Vgs 48nC @ 10V
FET Feature -
Current - Continuous Drain (Id) @ 25°C 53A (Tc)
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