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IRG8CH137K10F Tech Specifications

IGBT CHIP WAFER

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - IGBT - Tunggal
Manufacturer International Rectifier (Infineon Technologies)
Factory Lead Time 3 Weeks
Voltage - Collector Emitter Breakdown (Max) 1200V
Test Condition 600V, 150A, 2 Ohm, 15V
Switching Energy -
Package / Case Die
Operating Temperature -40°C ~ 175°C (TJ)
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
IGBT Type -
Detailed Description IGBT 1200V 150A Surface Mount Die
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 150A
Td (on/off) @ 25°C 115ns/570ns
Supplier Device Package Die
Other Names SP001533700
Mounting Type Surface Mount
Manufacturer Standard Lead Time 16 Weeks
Input Type Standard
Gate Charge 820nC
Current - Collector (Ic) (Max) 150A
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IRG8CH137K10F Documents

Download datasheets and manufacturer documentation for IRG8CH137K10F

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