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DTC114ECAHZGT116 Tech Specifications

NPN 100MA 50V DIGITAL TRANSISTOR

Product Attribute Attribute Value
Category Produk Semikonduktor Diskrit / Transistor - Bipolar (BJT) - Tunggal, Pra-Biased
Manufacturer LAPIS Semiconductor
Factory Lead Time 3 Weeks
Vce Saturation (Max) @ Ib, Ic 300mV @ 500µA, 10mA
Supplier Device Package SST3
Resistor - Emitter Base (R2) 10 kOhms
Power - Max 350mW
Package / Case TO-236-3, SC-59, SOT-23-3
Mounting Type Surface Mount
Manufacturer Standard Lead Time 7 Weeks
Frequency - Transition 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 10mA, 5V
Current - Collector (Ic) (Max) 100mA
Product Attribute Attribute Value
Part Status Active
RoHS Status ROHS3 Compliant
Pbfree Code yes
Transistor Type NPN - Pre-Biased + Diode
Series Automotive, AEC-Q101
Resistor - Base (R1) 10 kOhms
Packaging Original-Reel®
Other Names DTC114ECAHZGT116DKR
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Lead Free Status / RoHS Status Lead free / RoHS Compliant
Detailed Description Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased + Diode 100mA 250MHz 350mW Surface Mount SST3
Current - Collector Cutoff (Max) -
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